| PART |
Description |
Maker |
| STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET
N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STF23NM60N STI23NM60N STW23NM60N STP23NM60N STB23N |
N-channel 600 V - 0.150 ヘ - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh⑩ Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET
N-channel 600 V - 0.150 楼? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh垄芒 Power MOSFET
|
http://
STMicroelectronics
|
| STB13NM50N STB13NM50N-1 STP13NM50N STF13NM50N STW1 |
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET
N-channel 500V - 0.250ヘ - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| IRF7311TR IRF7311TRPBF |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
International Rectifier
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| APT5010LVRG |
Power MOS V is a new generation of high voltage N-Channel enhancement
|
Microsemi Corporation
|
